MEK350-02DA |
RFQ for MEK350-02DA Required Field |
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| Technical/Catalog Information | MEK350-02DA |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Diode Type | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) (per Diode) | 356A |
| Voltage - Forward (Vf) (Max) @ If | 1.07V @ 260A |
| Current - Reverse Leakage @ Vr | 3mA @ 200V |
| Reverse Recovery Time (trr) | 200ns |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MEK350 02DA MEK35002DA |
| Product | Manufacturers | Pack | D/C |
| MEK350-02DA | - | - | - |
Typical Application |
Features |
| Antiparallel diode for high frequency switching devices Free wheeling diode in converters and motor control circuits Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders | International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 |
| Symbol | Test Conditions | Maximum | Ratings |
| IFRMS IFAVM IFRM |
TC = 75 TC = 75; rectangular, d = 0.5 tP < 10s; rep. rating, pulse width limited by TVJM |
503 356 1800 |
A A A |
| IFSM | TVJ = 45; t = 10 ms (50 Hz), sine t = 8.3 ms(60 Hz), sine |
2400 2640 |
A A |
| TVJ = 150; t = 10 ms (50 Hz), sine t = 8.3 ms(60 Hz), sine |
2160 2380 |
A A | |
| I2t | TVJ = 45; t = 10 ms (50 Hz), sine t = 8.3 ms(60 Hz), sine |
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